Temperature and excitation intensity tuned photoluminescence in Ga0.75In0.25Se crystals
Identifieur interne : 000381 ( Main/Repository ); précédent : 000380; suivant : 000382Temperature and excitation intensity tuned photoluminescence in Ga0.75In0.25Se crystals
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Abstract
Photoluminescence (PL) spectra of Ga0.75In0.25Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) and 623 nm (1.99 eV, B-band) were revealed at T= 7 K. The excitation laser intensity dependence of the emission bands have been studied in the 0.06-1.40 W cm-2 range. Radiative transitions from shallow donor levels located at EA = 0.11 and EB = 0.15 eV below the bottom of conduction band to single shallow acceptor level located at 0.01 eV above the valence band are suggested to be responsible for the observed A- and B-bands. A simple model was proposed to interpret the recombination processes in Ga0.75In0.25Se single crystals.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Temperature and excitation intensity tuned photoluminescence in Ga<sub>0.75</sub>In<sub>0.25</sub>Se crystals</title><author><name sortKey="Isik, M" uniqKey="Isik M">M. Isik</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Electronics Engineering, Atilim University</s1><s2>06836 Ankara</s2><s3>TUR</s3><sZ>1 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>06836 Ankara</wicri:noRegion></affiliation></author><author><name sortKey="Guler, I" uniqKey="Guler I">I. Guler</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Material Science and Engineering Department, Çankaya University</s1><s2>06810 Ankara</s2><s3>TUR</s3><sZ>2 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>06810 Ankara</wicri:noRegion></affiliation></author><author><name sortKey="Gasanly, N M" uniqKey="Gasanly N">N. M. Gasanly</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, Middle East Technical University</s1><s2>06800 Ankara</s2><s3>TUR</s3><sZ>3 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>06800 Ankara</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0117048</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0117048 INIST</idno><idno type="RBID">Pascal:13-0117048</idno><idno type="wicri:Area/Main/Corpus">001142</idno><idno type="wicri:Area/Main/Repository">000381</idno></publicationStmt><seriesStmt><idno type="ISSN">0925-3467</idno><title level="j" type="abbreviated">Opt. mater. : (Amst.)</title><title level="j" type="main">Optical materials : (Amsterdam)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>III-V semiconductors</term><term>Monocrystals</term><term>Optical materials</term><term>Optical properties</term><term>Photoluminescence</term><term>Radiative transition</term><term>Ternary compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Photoluminescence</term><term>Transition radiative</term><term>Propriété optique</term><term>Monocristal</term><term>Matériau optique</term><term>Semiconducteur III-V</term><term>Composé ternaire</term><term>4270N</term><term>7855C</term><term>Séléniure de gallium indium</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Photoluminescence (PL) spectra of Ga<sub>0.75</sub>In<sub>0.25</sub>Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) and 623 nm (1.99 eV, B-band) were revealed at T= 7 K. The excitation laser intensity dependence of the emission bands have been studied in the 0.06-1.40 W cm<sup>-2</sup> range. Radiative transitions from shallow donor levels located at E<sub>A</sub> <sub>=</sub> 0.11 and E<sub>B</sub> <sub>=</sub> 0.15 eV below the bottom of conduction band to single shallow acceptor level located at 0.01 eV above the valence band are suggested to be responsible for the observed A- and B-bands. A simple model was proposed to interpret the recombination processes in Ga<sub>0.75</sub>In<sub>0.25</sub>Se single crystals.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0925-3467</s0></fA01><fA03 i2="1"><s0>Opt. mater. : (Amst.)</s0></fA03><fA05><s2>35</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Temperature and excitation intensity tuned photoluminescence in Ga<sub>0.75</sub>In<sub>0.25</sub>Se crystals</s1></fA08><fA11 i1="01" i2="1"><s1>ISIK (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>GULER (I.)</s1></fA11><fA11 i1="03" i2="1"><s1>GASANLY (N. M.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Electronics Engineering, Atilim University</s1><s2>06836 Ankara</s2><s3>TUR</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Material Science and Engineering Department, Çankaya University</s1><s2>06810 Ankara</s2><s3>TUR</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Physics, Middle East Technical University</s1><s2>06800 Ankara</s2><s3>TUR</s3><sZ>3 aut.</sZ></fA14><fA20><s1>414-418</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>22598</s2><s5>354000173213580150</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>22 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0117048</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Optical materials : (Amsterdam)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Photoluminescence (PL) spectra of Ga<sub>0.75</sub>In<sub>0.25</sub>Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) and 623 nm (1.99 eV, B-band) were revealed at T= 7 K. The excitation laser intensity dependence of the emission bands have been studied in the 0.06-1.40 W cm<sup>-2</sup> range. Radiative transitions from shallow donor levels located at E<sub>A</sub> <sub>=</sub> 0.11 and E<sub>B</sub> <sub>=</sub> 0.15 eV below the bottom of conduction band to single shallow acceptor level located at 0.01 eV above the valence band are suggested to be responsible for the observed A- and B-bands. A simple model was proposed to interpret the recombination processes in Ga<sub>0.75</sub>In<sub>0.25</sub>Se single crystals.</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B70N</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H55C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>03</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Transition radiative</s0><s5>04</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Radiative transition</s0><s5>04</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Transición radiativa</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Propriété optique</s0><s5>41</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Optical properties</s0><s5>41</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Monocristal</s0><s5>47</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Monocrystals</s0><s5>47</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Matériau optique</s0><s5>57</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Optical materials</s0><s5>57</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>62</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>62</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>63</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>63</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>4270N</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>7855C</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Séléniure de gallium indium</s0><s4>INC</s4><s5>85</s5></fC03><fN21><s1>091</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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